新颖的SiTime Endura MEMS核心技术，温度补偿结构的一个关键元件是温度-数字转换器（TDC）。如图10所示，该电路块产生的输出频率与TF谐振器和TS谐振器产生的频率之比成比例。TDC具有30微开氏（µ°K）的温度分辨率和高达350赫兹的带宽。这些特征实现了优异的接近载波相位噪声性能和Allan偏差（ADEV）性能。

TDC的高带宽与TF和TS谐振器之间的紧密热耦合相结合，在TCXO温补振荡器受到快速温度瞬变时导致最小的频率误差。

图11是一个视频屏幕截图，展示了DualMEMS架构在快速热瞬态过程中的优势。当热枪同时应用于两个设备时，会捕捉到这一屏幕截图：DualMEMS Super TCXO晶振和领先石英供应商的±50 ppb载体级TCXO。作为对热枪刺激的响应，石英TCXO与标称温度的峰间偏差高达650 ppb（-450 ppb至+200 ppb），超过其数据表规格高达9倍。DualMEMS Super TCXO的频率变化几乎不明显，最大约为3ppb，远低于其100ppb的规格限制。在快速变化的环境条件下，对快速温度瞬态的弹性对于通信基础设施设备的性能和服务质量非常重要。请注意，Endura Super TCXO基于SiTime的Elite平台的DualMEMS架构™ 并且将具有与Elite Super TCXO相当的性能。观看完整的视频演示，了解对额外应力（包括气流、电源电压和小冲击应力）的比较响应。新颖的SiTime Endura MEMS核心技术.

Abracon’s new AST3TDA and AST3TDA53 temperature-controlled oscillator (TCXO) series provide the ideal tradeoff between precision timing performance and small size to meet emerging 5G design requirements. The VC/TCXO devices are ideal for 5G infrastructure applications such as macro base stations (AAU, DU/CU), small cells (Micro, Pico, Femto), and Wifi-6/6E.

The cloudification and densification of networks continues to propel demand for 5G telecommunication technology, increasing the performance and board space pressures placed on applications from smart devices and edge computing to electric vehicles and automotive ADAS.

The ultra-performance TCXOs deliver high precision holdover accuracy and stability over temperature performances in the most popular industry package sizes. For example, the 7.0 x 5.0 mm AST3TDA series can support a tight ±50ppb frequency stability up to a high 105ºC operating temperature.